ITRI: Estimate 7,300 Tonnes Shortage in Global Tin Market in 2018

Published: Nov 8, 2017 11:01

Save

International Tin Research Institute (ITRI) said on Wednesday, estimated shortage in global refined tin market will increase to 7,300 tonnes in 2018.

SHANGHAI, Nov.8 (SMM)－International Tin Research Institute (ITRI) said on Wednesday, estimated shortage in global refined tin market will increase to 7,300 tonnes in 2018, because surge tendency of Burma supply is disappearing gradually.

The article is edited by SMM and is provided for information purpose only. It does not mean SMM agrees with its views and SMM assumes no liability for accuracy of information contained or quoted in the article.

tin supply Burma

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM‘s internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or to learn more information, please contact: lemonzhao@smm.cn

For more information on how to access our research reports, please contact:service.en@smm.cn

Related News

Mar 13, 2026 15:57

Data: SHFE, DCE market movement (Mar 13)

The following table shows the ferrous and nonferrous metals movement on the SHFE and DCE on 13 Mar , 2026

Mar 13, 2026 15:57

Mar 13, 2026 11:53

Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]

[SMM Tin Midday Review: Center of the Most-Traded SHFE Tin Contract Moved Lower, Trading Was Slightly Sluggish Amid Structural Divergence in End-Use Demand]

Mar 13, 2026 11:53

Mar 13, 2026 10:08

[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]

According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.

Mar 13, 2026 10:08