According to reports, a few days ago, Renault Group and Italian Semiconductor announced that they have reached a strategic cooperation, Italian and French Semiconductor will ensure that Renault's wide band gap (third-generation semiconductor) device production needs will be met in 2026-2030. At the same time, the two sides will also cooperate to develop efficient and suitable size SiC (silicon carbide) and GaN (gallium nitride) technologies and products to improve the power performance of electric and hybrid vehicles.
The CEO of Renault said that the cooperation has three important meanings: first, to ensure the supply of key components in the future; second, to jointly develop wide band gap technology, which will help to further improve the battery life and charging performance of cars; third, it will help to reduce the cost of electric powertrain by 30%, thus creating a lower-cost electric vehicle popular with consumers.
Affected by the problem of "lack of core", automakers are strengthening their cooperation with suppliers of silicon carbide power devices. On March 25 this year, Weili of Germany announced that it had won an order worth "hundreds of millions of euros" to supply Hyundai with 800V silicon carbide inverters. On April 21 this year, Jianghuai Automobile signed a strategic agreement with Bosch on silicon carbide inverters. Relevant data show that electric vehicles have become the largest application market of silicon carbide. Cree, the leading SiC company, says the car business accounts for about half of its production capacity. At present, Tesla and other new energy car companies are rapidly introducing silicon carbide technology. With Renault and other traditional automobile giants grabbing production capacity, the industry is expected to accelerate the outbreak, and domestic companies in related fields have attracted attention.
According to the theme database of the Financial Associated Press, among the relevant listed companies:
Tianke Heda, which is invested by Tianfu Energy, is one of the earliest and largest silicon carbide wafer manufacturers in China. at present, it has mastered the manufacturing technology of 6-inch silicon carbide wafers and successfully realized batch supply.
Jetty Microelectronics cooperates with the Institute of Microelectronics of the Chinese Academy of Sciences to develop semiconductor devices with SiC and GaN as the third generation semiconductor materials, with 4 patents related to gallium nitride and silicon carbide. At present, there are closed tests of a small amount of silicon carbide devices.

![[Flash | Июльский Imacec в Чили упал на 1,5% в годовом исчислении, самое резкое месячное падение с 2022 года на фоне спада в горнодобывающей отрасли на 9,3%]](https://imgqn.smm.cn/usercenter/yunIW20251217171723.jpeg)
![[SMM Хром Флэш] Потенциальная сделка Valterra-Northam может изменить ландшафт рынка хромового концентрата Южной Африки](https://imgqn.smm.cn/usercenter/qbMSp20251217171722.jpeg)
![Сокращение производства приносит выгоду, поскольку фьючерсные и спотовые тренды расходятся; цены на металлический кремний остаются в патовой ситуации [Еженедельный обзор кремниевой промышленности SMM]](https://imgqn.smm.cn/usercenter/aNMzb20251217171724.jpg)
