After TSMC, another semiconductor wafer foundry leader has entered the third generation of semiconductors.
According to Taiwanese media reports today, UMC has cut into the third-generation semiconductor field by investing in Lianying. UMC plans to start with 6-inch gallium nitride (GaN) products, followed by the layout of silicon carbide (SiC), and the development of 8-inch wafers. The company revealed that the third-generation semiconductor process will be converted from CMOS and will be waiting for an opportunity to expand production in the future.
UMC said that as fewer manufacturers in the industry can provide overall GaN solutions, they are building a technology platform jointly developed by UMC and Lianying to focus on electronics, radio frequency and microwave applications, which are expected to be introduced into IC design customers next year.
In addition, UMC has joined hands with (IMEC), a Belgian microelectronics research center, to carry out research and development of third-generation semiconductors. The latter is a world-renowned independent public R & D platform and an indicator R & D institution in the semiconductor industry, with cooperation from Intel, Samsung, TSMC and Qualcomm.
It is worth mentioning that Lianying is expected to become the main production position of the third generation semiconductors of UMC. Lianying's main business before is 6-inch wafers, but it has been in a state of loss for a long time, and its capacity utilization is also at a low level. However, since the second half of last year, performance has improved, capacity continues to be fully loaded, and capacity is expected to double next year compared with this year.
The revolution of energy technology opens up the growth space to infiltrate the third generation semiconductors in the material field.
In addition to UMC, the rest of the industry chain has not missed the opportunity of the third generation semiconductors.
Leading TSMC has invested in GaN for many years and has provided 6-inch wafer foundry services in small quantities. At the same time, for the automotive field, the company has cooperated with Italian Semiconductor to develop the GaN process, while Navitas (GaN consumer market leader), GaN Systems and other manufacturers have also invested in TSMC to produce high-voltage power semiconductor devices.
World Advanced has launched 8-inch GaN on Si research and development, and more than 10 customers have carried out product design. Taiwan Electronic Times pointed out that the reliability and yield of this technology are close to the stage of mass production.
Just last week, the silicon wafer manufacturer Global Crystal announced that it will greatly expand the production of third-generation semiconductors next year, and the production capacity of GaN and SiC will double.
Behind the competing layout of various manufacturers is the broad incremental space brought by the rise of new energy vehicles, 5G and other emerging industries and the goal of "double carbon".
In terms of SiC, the main driving force behind it is closely linked with new energy vehicles. Chen Dongpo, deputy general manager of San'an Optoelectronics, predicts that 80-90% or even 100% of long-range models will be imported into SiC devices in 2023-2024. At the same time, high-voltage fast charging platform is another demand growth point. At present, automobile companies build 800V high-voltage platform from IGBT, using SiC devices to replace silicon-based IGBT.
GaN is mainly used in 5G RF devices, power devices and so on, and the market space is also favored.
Generally speaking, the third-generation semiconductors are still in the early stage of development, and analysts believe that the gap between domestic enterprises and international giants is relatively small, which is also more beneficial to the newcomers.
