SMM: according to media news, China is planning to include strong support for the development of the third-generation semiconductor industry in the 14th five-year Plan. Develop domestic semiconductor technology to cope with external constraints.
China plans to provide extensive support for the development of third-generation semiconductors in education, scientific research, development, financing, applications and other areas within five years from 2021 to 2025, according to people familiar with the matter. The economic strategy for the next five years includes investing about $1.4 trillion in technology areas such as wireless networks and artificial intelligence, it said.
Yesterday afternoon, affected by the relevant news, the concept stock dry photo optoelectronics and other related targets were pulled up in a straight line.
Chen Jiansheng, an analyst at Century Securities, said that the third generation semiconductor materials are the cornerstone of the leap forward of power semiconductors.
Compared with the traditional silicon materials, the third generation semiconductor materials, that is, wide band gap semiconductor materials, refer to the semiconductor materials whose band gap is 2.3eV or above. At present, the more mature ones are silicon carbide (SiC), gallium nitride (GaN) and so on. It is more suitable for manufacturing high-frequency and high-power devices that can withstand high temperature, high voltage and high current.
Huachuang Securities pointed out that with the development of the new computing era driven by the Internet of things, big data and artificial intelligence, the demand for semiconductor devices is growing, and the requirements for device reliability and performance indicators are more stringent. The third generation semiconductors represented by silicon carbide have been paid more and more attention by the market. a complete industrial chain covering materials, devices, modules and applications has been formed in the world, and a new round of industrial upgrading has begun in the world.
The third-generation semiconductor-related patent applications have increased rapidly since 2000, and the United States has led the global patent growth in the early stage, while in recent years, the number of applications in China has grown rapidly, surpassing the United States. Infineon, ST and other global power semiconductor giants, as well as China Resources Micro, CRRC Times Semiconductor and other domestic power manufacturers have focused on the research in this field.
In order to develop power semiconductors, Huawei has also opened the layout of third-generation semiconductor materials. Hubble Technology Investment Co., Ltd., owned by Huawei, invested in Shandong Tianyue, a leading silicon carbide, with a 10% stake in August 2019.
The following are the core targets of various institutions on the third generation semiconductor materials combed by the Financial Associated Press and Star Mining data, in which silicon carbide concept stocks include Taiwan Foundation shares, Lou Xiao Technology, gallium nitride concept stocks include Haite High-tech, Yangjie Technology, Shilan Micro, Wentai Technology, Sanan Optoelectronics, Huarun Micro and so on.
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