[Chaoying Electronics to Invest 2.086B Yuan in Huangshi for High-Multilayer and HDI PCB P3 Project]

Published: Aug 7, 2026 18:29
Chaoying Electronics announced a plan to invest in the construction of a high-multilayer and HDI printed circuit board P3 project. The project is located in Huangshi City, Hubei Province, with an estimated total investment of 2.086 billion yuan, funded by self-owned or self-raised funds, and a construction period of 24 months. After completion and operation, the project will effectively break through the capacity bottleneck of the company's storage PCB products, significantly enhancing the mass production of high-end storage products and the supporting delivery capability for core clients; at the same time, it will steadily expand the capacity of high-end automotive electronics PCB, supporting a small amount of AI server PCB capacity, and fully meet the high-end market demand across multiple downstream sectors.

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM's internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or for more information, please contact: lemonzhao@smm.cn
For more information on how to access our research reports, please contact:service.en@smm.cn
Related News
Disappointing Nonfarm Payrolls Dampen Rate Hike Expectations, Dollar Posts Second Straight Weekly Loss, Metals Show Mixed Performance, Precious Metals Stage Strong Weekly Rebound [Overnight Market]
15 mins ago
Disappointing Nonfarm Payrolls Dampen Rate Hike Expectations, Dollar Posts Second Straight Weekly Loss, Metals Show Mixed Performance, Precious Metals Stage Strong Weekly Rebound [Overnight Market]
Read More
Disappointing Nonfarm Payrolls Dampen Rate Hike Expectations, Dollar Posts Second Straight Weekly Loss, Metals Show Mixed Performance, Precious Metals Stage Strong Weekly Rebound [Overnight Market]
Disappointing Nonfarm Payrolls Dampen Rate Hike Expectations, Dollar Posts Second Straight Weekly Loss, Metals Show Mixed Performance, Precious Metals Stage Strong Weekly Rebound [Overnight Market]
15 mins ago
[CPCA: In July 1-31, the national passenger car new energy market retail sales reached 970,000 units, down 2% YoY]
16 hours ago
[CPCA: In July 1-31, the national passenger car new energy market retail sales reached 970,000 units, down 2% YoY]
Read More
[CPCA: In July 1-31, the national passenger car new energy market retail sales reached 970,000 units, down 2% YoY]
[CPCA: In July 1-31, the national passenger car new energy market retail sales reached 970,000 units, down 2% YoY]
The China Passenger Car Association (CPCA) released data showing that from July 1 to 31, retail sales of new energy passenger vehicles in China totaled 970,000 units, down 2% YoY and down 4% MoM, with year-to-date cumulative retail sales reaching 5.675 million units, down 12% YoY; from July 1 to 31, wholesale of new energy passenger vehicles by producers reached 1.463 million units, up 24% YoY but down 1% MoM, with year-to-date cumulative wholesale reaching 8.251 million units, up 8% YoY. From July 1 to 31, the retail penetration rate of the national new energy market was 64.4%; the wholesale penetration rate of new energy passenger vehicles by producers was 65.3%.
16 hours ago
[Samsung Unveils BV-NAND, zHBM, and zNAND-O: 10x Density, 3x Energy Efficiency Over HBM5]
16 hours ago
[Samsung Unveils BV-NAND, zHBM, and zNAND-O: 10x Density, 3x Energy Efficiency Over HBM5]
Read More
[Samsung Unveils BV-NAND, zHBM, and zNAND-O: 10x Density, 3x Energy Efficiency Over HBM5]
[Samsung Unveils BV-NAND, zHBM, and zNAND-O: 10x Density, 3x Energy Efficiency Over HBM5]
Samsung unveiled the V10 Bonding V-NAND (BV-NAND) prototype and the industry’s first conceptual models of zHBM and zNAND-O architectures at the Future of Memory and Storage (FMS) conference held in Santa Clara, California, US. The BV-NAND chip features over 400 layers and adopts a novel wafer bonding architecture to enhance memory density and performance. Compared with the previous-generation V9 NAND, it delivers approximately 58% higher memory density, along with significant improvements in read, write, and I/O performance, meeting the demands of AI systems for higher-capacity, more energy-efficient memory solutions. For the zHBM and zNAND-O architectures, Samsung achieves greater data capacity in a smaller footprint by vertically stacking memory cells. Unlike conventional HBM, which is packaged side-by-side with AI processors, zHBM stacks memory vertically on top of the AI accelerator, thereby shortening data transfer distances, increasing bandwidth, and boosting energy efficiency. Samsung stated that its wafer bonding technology is expected to deliver more than 10 times the memory density of conventional HBM5, improve energy efficiency by 3 times, and reduce thermal resistance by more than half.
16 hours ago
Chaoying Electronics announced a plan to invest in the construction of - Shanghai Metals Market (SMM)