SK Hynix Triples EUV Investment for 1c DRAM, Eyes HBM4E Sample Delivery This Year
SK Hynix is accelerating efforts to enhance the competitiveness of its 10-nanometer sixth-generation (1c) DRAM, and investment in extreme ultraviolet (EUV) equipment for this process node has increased approximately threefold compared to the original plan. Industry sources revealed that SK Hynix is focusing on advancing 1c DRAM technology for application in the seventh-generation High Bandwidth Memory HBM4E core chips and plans to deliver samples this year. As HBM's largest client, NVIDIA, plans to launch its next-generation AI accelerator "Vera Rubin Ultra" equipped with HBM4E in H2 of next year, SK Hynix must accelerate its R&D pace. Industry sources revealed that SK Hynix's 1c DRAM yield for general-purpose DRAM has risen to 80%. The company plans to convert more than half of its DRAM capacity to 1c process products this year and is expected to secure approximately 190,000 wafers of capacity by year-end.