On August 1, the research and development of silicon carbide single crystal substrate and industrialization project construction project of Anhui Microcore Yangtze River Semiconductor Materials Co., Ltd. ushered in the capping of the main project.
On November 19 last year, the foundation laying ceremony for the establishment and construction of Anhui Microcore Yangtze River Semiconductor Materials Co., Ltd. was held in Tongling Economic Development District, Anhui Province.
According to the news from Shanghai Shenhe Thermal Magnetoelectronics Co., Ltd at that time, Anhui Microcore Yangtze River Semiconductor material Co., Ltd. invested 1.35 billion yuan in SiC project, covering an area of 100mu, with a new factory building area of 32000 square meters, including silicon carbide crystal growth workshop, wafer processing workshop, R & D center, power plant, auxiliary plant and so on. The project takes the 4-inch 6-inch process-compatible automatic production line as the key implementation point, and the construction period is 4 years, from October 2020 to October 2024. It is planned to complete the plant construction and equipment installation and commissioning in the third quarter of 2021, and to complete the pilot test and start trial sale by the end of December 2021. It is estimated that the annual production of 4-inch silicon carbide wafers is 30, 000 wafers and 6-inch 120000 wafers.
According to enterprise investigation, Anhui Microcore Yangtze River Semiconductor Materials Co., Ltd. was established in October 2020, and Shanghai Shenhe Thermal Magnetic Electronics Co., Ltd. is its major shareholder, with a shareholding ratio of 31.4607%. The company's business scope includes: Silicon carbide ingots, silicon carbide wafer sales, silicon carbide materials and related products research and development, production, sales, semiconductor materials research and development, production, sales and so on.

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