GAC, CRRC-backed Guangzhou Qinglan starts operations of IGBT factory

Shanghai (Gasgoo)- On December 5, the inauguration ceremony of the insulated gate bipolar transistor (IGBT) production line of Guangzhou Qinglan Semiconductor Co., Ltd. ("Guangzhou Qinglan") took place at the GAC Components (Guangzhou) Industrial Park.

Guangzhou Qinglan, a joint venture between GAC Component Co., Ltd. and Zhuzhou CRRC Times Semiconductor Co., Ltd., has a planned total investment of 463 million yuan in the aforesaid project, which focuses on technology R&D and industrial application in the field of self-developed IGBT for new energy vehicles (NEVs). It is the first IGBT investment project wholly-owned by a Chinese company in the South China region and a key construction project in Guangzhou. The initial phase aims for an annual production capacity of 400,000 automotive IGBT modules, with the second phase planning an additional 400,000 units annually by 2025. Upon completion of the entire project, the total capacity will reach 800,000 units per year.

This recent inauguration ceremony signifies a crucial milestone as Guangzhou Qinglan IGBT Project (Phase One) achieves full-scale production, propelling the project forward.

Through independent R&D and external collaboration, GAC Group is rapidly perfecting its R&D and industrialization layout in the key components of NEVS. In the chip domain, strategic partnerships with CanSemi, Horizon Robotics, and Deep Mirror have been formed, contributing to the building of an independent and controllable supply chain, and the synergistic development of the upstream and downstream sectors in the industry.

Established on December 20, 2021, Guangzhou Qinglan features a registered capital of 300 million yuan. GAC Component holds a 51% stake in the company, while Zhuzhou CRRC Times Semiconductor holds 49%. The company primarily focuses on the production of power semiconductors IGBT for NEVs.