According to evertiq, in order to consolidate its position in power semiconductors, Infineon will invest 2 billion euros to build a new front-end fab in Malaysia to enhance its manufacturing capacity in broadband gap (SiC and GaN) semiconductors.
Infineon said that once fully equipped, the new plant will generate 2 billion euros in annual revenue from products based on silicon carbide and gallium nitride. The plant is expected to have equipment ready in the summer of 2024, and the first wafers are scheduled to ship in the second half of 2024.
In addition, Jochen Hanebeck, chief operating officer of Infineon, said in a press release that renewable energy and electric vehicles are the main drivers of strong and sustainable growth in demand for power semiconductors. And Infineon expands the production capacity of silicon carbide and gallium nitride in order to prepare for the accelerated development of the broadband gap market.
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