Guobo Electronics announced that the gallium nitride on silicon power amplifier chip, jointly developed by the company and leading domestic terminal producers, has been design-optimized for end-use applications such as mobile phones, filling the gap in the industry for gallium nitride on silicon power amplifier terminal RF applications. It marks the industry's first mass production and delivery of gallium nitride on silicon power amplifier chips in the terminal RF field. The gallium nitride on silicon power amplifier chip product has completed certification with leading domestic terminal producers, with mass production and delivery exceeding 1 million units.