Shanghai (Gasgoo)- On January 2, United Nova Technology Co., Ltd. ("UNT"), a Chinese player in power discrete and module filed, and GAC AION, a new energy vehicle maker under GAC Group, signed a strategic cooperation agreement to establish a joint laboratory, marking a deepening of their collaboration in the automotive semiconductor sector, according to a post on UNT's WeChat account.
This partnership expands their cooperation from commercial agreements to joint research and development, with the aim of designing next-generation automotive semiconductor chips and modules.
Unveiling ceremony of the joint laboratory was held at the same time.
This collaboration follows UNT's prior agreement with GAC AION in October 2024, when the two companies signed a long-term strategic partnership. Under that agreement, UNT committed to supplying high-performance silicon carbide (SiC) MOSFETs and silicon-based IGBT chips and modules for all of GAC AION's new vehicle models. These components are expected to be integrated into millions of new energy vehicles produced by GAC AION in the coming years, enabling more efficient and stable energy conversion and control, thereby enhancing vehicle performance and driving experience.
According to the new agreement, the joint laboratory will focus on automotive semiconductor research and product development, spanning process design, manufacturing, and end-use applications. The collaboration aims to tackle challenges in the design, production, and application of automotive-grade power semiconductors, strengthen the supply chain for automotive semiconductors, and accelerate product iteration and innovation.
As the automotive industry transitions into the era of smart electric vehicles, semiconductor technology has become a critical driver of progress and innovation. Both companies expressed their commitment to leveraging their combined technological and market resources to push forward advancements in automotive semiconductor technologies.
