Shanghai (Gasgoo)- On March 29, the NIO & UNT (United Nova Technology Co., Ltd.) Partnership Conference was held at UNT’s headquarters in Shaoxing city, where the C-sample of NIO's in-house developed SiC module rolled off the production line as well.
It is widely recognized that as the automotive industry continues to deepen its transition towards electrification and green, low-carbon solutions, silicon carbide (SiC) is playing an increasingly significant role in electric vehicles. SiC boasts higher switching frequencies, breakdown voltages, and thermal resistance, significantly enhancing the performance and energy efficiency of power transistors. These features are crucial for the high-voltage environments of electric vehicles.
UNT is a contract manufacturer equipped with capable of producing automotive-grade IGBT/SiC chips and modules, as well as mixed-signal high-voltage analog chips, featuring a comprehensive and technologically advanced platform for the development and mass production of high-quality power devices and power ICs (integrated circuits).
Earlier this year, in January, UNT signed a long-term supply agreement with NIO for SiC module products. According to the agreement, UNT will produces NIO's first self-developed 1,200V SiC module, and will become an important partner in NIO's full-stack self-developed 900V high-voltage electric vehicle platform project.
The latest move marks a milestone in the partnership between the two parties, signifying further maturity in the development of NIO's self-developed SiC modules and bringing it a step closer to mass production.
