Recently, Luxiao Technology released a record sheet of investor relations activities, which revealed the new developments of the Hefei silicon carbide project.
On August 8, 2020 and September 15, 2020, Luxiao Technology signed with the people's Government of Changfeng County of Hefei City and the Management Committee of Anhui Changfeng Shuangfeng Economic Development Zone the Strategic Cooperation Framework Agreement of Changfeng County and Luxiao Technology Co., Ltd. to jointly invest in the construction of the third generation power semiconductor (silicon carbide) industrial park and the Investment Cooperation Agreement of Changfeng County Investment attraction Project.
It is reported that Luxiao Technology and the people's Government of Changfeng County of Hefei City will jointly invest in the construction of the third generation power semiconductor (silicon carbide) industrial park in Changfeng County of Hefei City, including, but not limited to, the R & D and industrialization projects of silicon carbide and other third-generation semiconductors, including silicon carbide crystal growth, substrate fabrication, epitaxial growth, and so on. The total investment of the project is expected to be 10 billion yuan.
Luxiao Technology said that on June 25, 2021, Luxiao Technology signed a capital increase agreement with Hefei Beicheng, Changfeng tetrahedron and Hefei Changfeng Industrial Investment to promote venture capital fund partnership (limited partnership) (led by Hefei production and Investment). At present, the silicon carbide substrate has been sent and tested, and the production equipment of Hefei Luxiao has entered the stage of installation and commissioning.
Luxiao Technology also said that the silicon carbide plant invested in Hefei has fully mastered the various coupling relationships among the process parameters of 6-inch conductive silicon carbide crystal growth, determined the optimal values of each process parameter, and achieved 40% of the finished product rate in the pilot line. It has the equipment and technical conditions for repeatable and batch growth of silicon carbide crystals. Among them, Lou Xiao Technology provides 100% domestic crystal growth equipment. At present, according to the improvement of the process, the long crystal furnace has been optimized for three generations and the equipment has been finalized. 100 equipment in the first phase of the Hefei project have been completed factory commissioning, and it is expected that the installation and commissioning will be completed at the Hefei plant by the end of July. The substrate has been tested by a number of third-party units and has reached the P-level standard. With the gradual introduction of substrate processing equipment, cleaning equipment and testing equipment, as well as the further optimization of processing technology, Hefei Plant can achieve small batch trial production of 6-inch conductive silicon carbide substrate in September.
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