SMM Network News: recently, the third-generation semiconductor base in Suzhou held a ceremony for the equipment to be moved into the base. This means that the third-generation semiconductor base in Suzhou begins to move from the plant construction stage to the mass production preparation stage, which marks the formal completion of the construction of the world's largest gallium nitride plant, and also marks a new era in the history of semiconductor innovation in China.

When completed, the project will become the world's largest R & D and production platform for the third-generation semiconductor industry chain, which integrates R & D, design, epitaxial production, chip manufacturing and testing. After full production, it will achieve a monthly production of 65000 silicon-based gallium nitride wafers. The products will provide core electronic components for the independent innovation and development of 5G mobile communications, data centers, new energy vehicles, self-driving and other strategic emerging industries.

Yingnosecco Suzhou third-generation semiconductor base is located in Fenhu High-tech Zone, Wujiang District, Suzhou City, Jiangsu Province, covering a total area of 245000 square meters. It is a key project in Jiangsu Province, with a total investment of more than 6 billion yuan. The project is expected to enter the trial production phase by the end of this year. The relevant person in charge of Innosecco said that the commissioning of the gallium nitride power chip mass production line fills the gap in China's high-end semiconductor device industry, and also means a breakthrough in the technical bottleneck restricting China's third-generation semiconductor industry.