[brief Review of tin in SMM] the center of gravity of tin in the night high jump moved up during the day in Shanghai.

Published: Jul 17, 2020 19:02

Save

SMM, July 17:

The Shanghai tin high jump opened at 140620 yuan / ton yesterday. After the opening, under the influence of bulls entering the market, it shook all the way up, hitting the intraday high of 141980 yuan / ton. Then the bulls made a profit to leave the market, a small pullback, and horizontal concussion. It opened at 141530 yuan / ton in the morning, fell slightly after opening and then fluctuated upwards. after hitting a high of 141960 yuan / ton, it shook sideways around 141000 yuan / ton after pullback, closing at 141200 yuan / ton, up 1280 yuan / ton, or 0.91%. 45045 hands were traded, 28635 positions were held, and 1090 hands were reduced. The physical part is located between the 10-day and 20-day moving average, and the upper pressure level is expected to be around 142500 yuan / ton.

Daily review

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM‘s internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or to learn more information, please contact: lemonzhao@smm.cn

For more information on how to access our research reports, please contact:service.en@smm.cn

Related News

Mar 13, 2026 15:57

Data: SHFE, DCE market movement (Mar 13)

The following table shows the ferrous and nonferrous metals movement on the SHFE and DCE on 13 Mar , 2026

Mar 13, 2026 15:57

Mar 13, 2026 11:53

Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]

[SMM Tin Midday Review: Center of the Most-Traded SHFE Tin Contract Moved Lower, Trading Was Slightly Sluggish Amid Structural Divergence in End-Use Demand]

Mar 13, 2026 11:53

Mar 13, 2026 10:08

[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]

According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.

Mar 13, 2026 10:08