[SMM Tin Morning News] yesterday's tin night in Shanghai fell slightly after rising first and then Yilun Xi.

Published: Jul 8, 2020 09:13

SMM7, March 8:

Lunxi trend: Lunxi electronic trading yesterday opened at US $17050 / tonne, with a maximum of US $17165 / tonne and a minimum of US $16970 / tonne, closing at US $16980 / tonne, down US $120 / tonne, with 299 lots and 16732 positions, a decrease of 141lots. Yesterday's LME inventory was 3880 tons, an increase of 50 tons.

Lunxi opened at $17050 a tonne yesterday and rose to $17100 a tonne in the morning before trading was light. It rebounded after falling in the afternoon, hit the intraday high of $17165 / ton above, pulled back after peaking, briefly adjusted sideways after the jump, and then continued down, reaching an intraday low of $16970 / tonne to close at $16980 / tonne, showing a negative line. The physical part is above all moving averages, and the lower support is expected to be around $16870 / tonne.

Shanghai tin trend: Shanghai tin main 2009 contract opened last night at 140420 yuan / ton, the highest 141680 yuan / ton, the lowest 140340 yuan / ton, closed at 141250 yuan / ton, up 120 yuan / ton, 13148 hands, 31473 positions, an increase of 141250 hands.

Last night, tin opened at 140420 yuan / ton in Shanghai, showing a trend of rising first and then suppressing it. After the opening, it mainly fluctuated upward under the influence of the bulls' entry, reached the intraday high of 141680 yuan / ton above, reached the peak callback, and the bulls left the market, the Shanghai tin concussion went down, closing at 141250 yuan / ton, showing a positive line, and the physical part was located near the 5-day moving average. It is expected that the upper pressure level is around 142500 yuan / ton.

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM‘s internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or to learn more information, please contact: lemonzhao@smm.cn
For more information on how to access our research reports, please contact:service.en@smm.cn
Related News
Data: SHFE, DCE market movement (Mar 13)
4 hours ago
Data: SHFE, DCE market movement (Mar 13)
Read More
Data: SHFE, DCE market movement (Mar 13)
Data: SHFE, DCE market movement (Mar 13)
The following table shows the ferrous and nonferrous metals movement on the SHFE and DCE on 13 Mar , 2026
4 hours ago
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
8 hours ago
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
Read More
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
[SMM Tin Midday Review: Center of the Most-Traded SHFE Tin Contract Moved Lower, Trading Was Slightly Sluggish Amid Structural Divergence in End-Use Demand]
8 hours ago
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
10 hours ago
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
Read More
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.
10 hours ago
[SMM Tin Morning News] yesterday's tin night in Shanghai fell slightly after rising first and then Yilun Xi. - Shanghai Metals Market (SMM)