[SMM tin morning news] tin Changyin fell in the internal and external trading period, and tin in Shanghai held steady above the support level last night.

Published: Oct 24, 2019 08:57

SMM, 23 Oct:

Trend: Lunxi Electronics opened yesterday at $16820 / tonne, up to $16855 / tonne and as low as $16540 / tonne, closing at $16580 / tonne, down $340 / tonne. A total of 338 hands were sold throughout the day, and 16967 hands were held, a reduction of 125 hands. The stock is 6685 tons, the same as before.

Lunxi electronic disk yesterday after the opening of $16820 / ton, the Asian session overall maintained in the opening price near the horizontal finishing. After the opening of the European market, the initial rise to $16825 / ton after the hindrance of pressure all the way down, the lowest down to $16540 / ton after a small rise, and finally closed at $16580 / ton, showing a negative line, the physical part is near the 10-day, 40-day, 60-day moving average, the lower shadow line is supported by the 20-day moving average, and the support below Lunxi is expected to be near $16500 / ton.

Shanghai tin trend: Shanghai tin main 2001 contract opened last night night 138600 yuan / ton, the highest 138600 yuan / ton, the lowest 137430 yuan / ton, closed 137700 yuan / ton, down 680 yuan / ton. 11708 hands were traded and 40572 hands were held, an increase of 468 hands.

Shanghai main tin 2001 contract last night after the opening of 138600 yuan / ton, affected by the increase of short positions, all the way shock downward, the lowest down to the night low 137430 yuan / ton to maintain a low consolidation, finally closed at 137700 yuan / ton, showing a negative line, the physical part is located near the 5-10 moving average, it is expected that the support below the Shanghai tin moving average is located at 137000 yuan / ton on the 20th.

"Click to sign up for this summit

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM‘s internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or to learn more information, please contact: lemonzhao@smm.cn
For more information on how to access our research reports, please contact:service.en@smm.cn
Related News
Data: SHFE, DCE market movement (Mar 13)
Mar 13, 2026 15:57
Data: SHFE, DCE market movement (Mar 13)
Read More
Data: SHFE, DCE market movement (Mar 13)
Data: SHFE, DCE market movement (Mar 13)
The following table shows the ferrous and nonferrous metals movement on the SHFE and DCE on 13 Mar , 2026
Mar 13, 2026 15:57
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
Mar 13, 2026 11:53
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
Read More
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]
[SMM Tin Midday Review: Center of the Most-Traded SHFE Tin Contract Moved Lower, Trading Was Slightly Sluggish Amid Structural Divergence in End-Use Demand]
Mar 13, 2026 11:53
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
Mar 13, 2026 10:08
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
Read More
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.
Mar 13, 2026 10:08
[SMM tin morning news] tin Changyin fell in the internal and external trading period, and tin in Shanghai held steady above the support level last night. - Shanghai Metals Market (SMM)