Zhonghuan Semiconductor to invest 9 billion yuan to build silicon project in Inner Mongolia

Published: Mar 19, 2019 14:07
The project will have annual capacity of 25GW

SHANGHAI, Mar 19 (SMM) – Zhonghuan Semiconductor will invest about 9 billion yuan to build a monocrystalline silicon project with annual capacity of 25GW in Inner Mongolia, the company said in a statement this noon.

The Tianjin-based company added that it has signed a letter of intent with the government of Hohhot, capital of Inner Mongolia.

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Zhonghuan Semiconductor to invest 9 billion yuan to build silicon project in Inner Mongolia - Shanghai Metals Market (SMM)