LME Tin to Drift Higher (2017-8-22)

Published: Aug 22, 2017 09:44

Save

LME tin should challenge resistance at USD 20,900/mt today and find support from weaker dollar.

SHANGHAI, Aug. 22 (SMM) –LME tin should challenge resistance at USD 20,900/mt today and find support from weaker dollar. SHFE 1709 tin should move mainly at RMB 143,000-146,000/mt today and still look for direction.
In Shanghai spot tin market, mainstream traded prices will lack upward momentum due to stable SHFE tin and are expected at RMB 144,000-145,500/mt today.

Key Macroeconomic Indicators for Base Metal Prices (2017-8-22)

LME tin prices SHFE tin prices tin prices Sn price base metal price forecast

Data Source Statement: Except for publicly available information, all other data are processed by SMM based on publicly available information, market communication, and relying on SMM‘s internal database model. They are for reference only and do not constitute decision-making recommendations.

For any inquiries or to learn more information, please contact: lemonzhao@smm.cn

For more information on how to access our research reports, please contact:service.en@smm.cn

Related News

Mar 13, 2026 15:57

Data: SHFE, DCE market movement (Mar 13)

The following table shows the ferrous and nonferrous metals movement on the SHFE and DCE on 13 Mar , 2026

Mar 13, 2026 15:57

Mar 13, 2026 11:53

Center of the Most-Traded SHFE Tin Contract Moves Lower, Transactions Slightly Softened Amid Structural Divergence in End-Use Demand [SMM Tin Midday Review]

[SMM Tin Midday Review: Center of the Most-Traded SHFE Tin Contract Moved Lower, Trading Was Slightly Sluggish Amid Structural Divergence in End-Use Demand]

Mar 13, 2026 11:53

Mar 13, 2026 10:08

[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]

According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.

Mar 13, 2026 10:08