Minde Electronics plans to raise no more than 500 million for silicon carbide power device projects.

On July 19th, A-share company Minde Electronics (300656.SZ) issued a plan to issue A-shares to specific targets.

The company discloses the plan to issue A-shares to specific targets in 2021, which is not more than 35 (including) specific objects that meet the conditions prescribed by the China Securities Regulatory Commission; the issue price is not less than 80% of the average trading price of the company's shares in the 20 trading days before the pricing benchmark; the number of shares issued does not exceed 35.937 million shares, and the lock-up period is 6 months.

The total amount of funds raised will not exceed 500 million yuan, after deducting the issuance expenses, 280 million yuan will be spent on the "research and development and industrialization project of silicon carbide power devices", 120 million yuan will be invested in the "high-end groove Schottky diode production capacity enhancement and technology improvement project suitable for new energy supply" and 100 million yuan will be invested in the "supplementary liquidity project".

Through the construction of this fund-raising project, the company plans to achieve the following goals: 1, to achieve independent control of the company's power semiconductor industry chain and improve the power semiconductor SmartIDM model; 2, to enrich the company's power semiconductor product line and enhance the core competitiveness of the power semiconductor industry; 3, to expand the company's power semiconductor production capacity and enhance market share and brand influence; 4. Enhance the company's capital strength and provide sufficient financial guarantee for the development of power semiconductor industry.

After this issue, it will build a production cooperation line with the wafer factory, realize the independent control of the company's power semiconductor industry chain in a real sense, and improve the SmartIDM mode of the company's power semiconductor industry, so as to lay a solid foundation for the long-term development of the company's power semiconductor industry.

At the same time, the funds raised in this issue are intended to be invested in the "Research and Development and industrialization Project of Silicon Carbide Power Devices" and "production capacity improvement and Technology improvement Project of High-end Groove Schottky Diodes suitable for New Energy supply". After the mass production of the above projects, It will mainly produce 600V-1700V silicon carbide Schottky diodes, 45V-150V high energy efficiency low conduction voltage drop silicon based groove Schottky diodes and 200V-300V high voltage silicon based Schottky diodes.

In the future, these products will mainly meet the needs of high-performance power semiconductors in new energy fields, such as photovoltaic, wind energy, energy storage, new energy vehicles and so on. The mass production of the above products will further enrich the company's power semiconductor product line, provide customers with richer and perfect power electronic device solutions and products, better meet customer needs, and ultimately enhance the core competitiveness of the company's power semiconductor industry and enhance the company's profitability.