San'an Integration: Silicon Carbide Power device Mass production Manufacturing platform to promote the Sustainable Development of New Energy vehicle Industry

Telah Terbit: Sep 30, 2020 14:49
Sumber: Three-ampere integrated circuit
[San'an Integration: Silicon Carbide Power device Mass production platform promotes the Sustainable Development of New Energy vehicle Industry] on September 29, the third generation semiconductor vertically integrated manufacturing platform "San'an Integration" signed a strategic cooperation framework agreement with Jinlong New Energy, a leading new energy bus company, in Xiamen, confirming that the two sides make use of their respective superior resources. Jointly promote the trial production and batch application of silicon carbide power devices in new energy bus motor controller and auxiliary drive controller.

SMM Network News: September 29th, the third generation semiconductor vertically integrated manufacturing platform "San'an Integration" and the new energy bus leading enterprise "Jinlong New Energy" signed a strategic cooperation framework agreement in Xiamen to determine that the two sides make use of their own superior resources to jointly promote the trial production and batch application of silicon carbide power devices in the prototype of new energy bus motor controller and auxiliary drive controller.

Yang Jian, deputy general manager of San'an Integration, and Dr. Chen Xiaobing, general manager of Jinlong New Energy, signed strategic cooperation framework agreements on behalf of both sides. Chen Jianye, general manager of Fujian Automobile Industry Group, Xie Siyu, vice chairman of Xiamen Jinlong Automobile Group, and Wu Wenbin, vice president of Xiamen Jinlong Automobile Group, attended the signing ceremony.

The global penetration of pure electric buses will quadruple in 2025, and the era of no subsidy calls for technological innovation at the bottom.

According to a study by market research firm Wood Mackenzie, the global penetration of pure electric buses will quadruple by 2025 due to policy support and a sharp drop in battery costs. At present, China has about 600000 pure electric buses, accounting for 98% of the global market, making it the largest single market in the world, while the United States and Europe continue to increase the penetration of clean buses under the guidance of federal government funding and EU regulations. The development path of China's new energy vehicles is of great significance to the global zero-emission clean travel.

The subsidy for the promotion of pure electric buses in China, which began in 2016, is gradually declining and will be officially withdrawn in 2022, and the market will return to rationality; at the same time, due to immature technology, the early pure electric buses have reached the end of their life cycle after five years of operation, and a new replacement cycle of electric buses will be ushered in in 2021. In the era of low subsidy or no subsidy, the electric bus with the third generation semiconductor power devices can reduce the electric drive energy consumption and improve the charging efficiency from the bottom structure, thus further reducing the vehicle life cycle operation cost. it is expected to become an important index for the procurement of a new round of electric buses.

Because of its high efficiency and low consumption, silicon carbide still needs a large-scale manufacturing platform to reduce its cost and accelerate its popularization.

The third generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) have incomparable electrical properties of silicon (Si) devices because of their wide band gap. Silicon carbide is about 3 times of the bandgap width of silicon, and can withstand higher working temperature and working voltage. Silicon carbide has higher electron saturation drift rate, which makes its switching frequency higher and switching loss lower.

The use of silicon carbide power devices in the "power exchanger, vehicle charger and motor controller" of pure electric vehicles can effectively reduce the volume of the heat dissipation system, significantly increase the working frequency, thus reduce the volume of passive components and increase the power density; significantly reduce the energy consumption of the motor controller. In short, the electric vehicle can achieve lightweight electrical system, low loss and fast charging, carry more power and provide longer mileage.

At present, the cost of silicon carbide power devices is still relatively high, but with the continuous improvement of global industrialization and production capacity, the cost problem will be solved effectively. It is wise for car companies to invest in R & D and layout in advance.

San'an integrated open manufacturing platform is willing to promote electric travel with more customers in the automobile industry chain.

Sanan Integration vertically integrates the third-generation semiconductor industry chain, providing comprehensive control over product consistency and reliability from crystal growth, substrate processing, epitaxial growth, device design, chip manufacturing to device closed testing, as well as perfect failure analysis capabilities. At present, 1200V/650V silicon carbide Schottky diodes (MPS structure) and 650V gallium nitride E-HEMT products have been launched, and 1200V silicon carbide MOSFET products will also be launched in 2020. Sanan Integration actively participates in the first Test and Verification Project of China Automobile gauge Semiconductor by the National New Energy vehicle Technology Innovation Center. The pure electric vehicles equipped with Sanan integrated silicon carbide power devices are tested in laboratory performance, room temperature test field, high temperature test field and alpine test site respectively, and show excellent performance and excellent reliability under different working conditions.

In July this year, San'an Integration announced the start of construction of Changsha silicon carbide manufacturing base, with a total investment of 16 billion yuan and covering an area of 1000 mu. It is a production base of substrate, epitaxy, chip and packaging industry chain with independent intellectual property rights. After the full completion of the project, the production capacity of silicon carbide power devices will be increased from the current 24000 pieces / year to 360000 pieces / year. San'an integrated and open manufacturing platform is willing to join hands with industry chain partners and new energy vehicle customers to accelerate the conversion of power semiconductors from silicon to silicon carbide.

Yang Jian, deputy general manager of San'an Integration, said that it is a great honor to reach a strategic cooperation framework agreement with Jinlong New Energy, a leading Chinese bus company. We also welcome more global vehicle and parts companies to discuss with Sanan the application of third-generation semiconductors of automotive regulation grade, so as to make everyone's travel cleaner and more energy-efficient.

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