Breakthrough in Wafer-Scale Growth of 2D Semiconductors Aids Post-Moore Chip Tech

Published: Apr 9, 2026 18:43

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Recently, a joint research team from the National University of Defense Technology and the Institute of Metal Research, Chinese Academy of Sciences, achieved a significant breakthrough in the field of wafer-scale growth and controllable doping of new-type high-performance two-dimensional semiconductors, which is expected to provide key material and device support for independently controllable chip technology in the post-Moore era. The related findings were recently published online in the top international journal *National Science Review*.

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