[SMM Tin Flash News: Samsung Reportedly Collaborates with NVIDIA to Accelerate R&D of Next-Generation NAND Flash Memory]
According to reports, Samsung Electronics is working with NVIDIA to accelerate the development of next-generation NAND flash memory chips. A joint research team comprising the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology has successfully developed a "physics-informed neural operator" model. This model analyzes the performance of ferroelectric-based NAND devices more than 10,000 times faster than existing models, and the related results have been made public. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.