The third-generation semiconductor power device designer and solution provider Pai Enjie Semiconductor (Hangzhou) Co., Ltd. (hereinafter referred to as "Pioneer Semiconductor") has recently completed tens of millions of yuan of angel round financing. This round of financing is invested by Shenzhen Chuangfang Investment (hereinafter referred to as "Chuang Dongfang"). Piaget Semiconductor continues to focus on the design and development of silicon carbide and gallium nitride power devices, and has achieved mass production of a series of products.
The founder of the company, Dr. Huang Xing, pointed out to Jiwei that this round of funds will be used for silicon carbide power device research and development, talent team building, marketing and product preparation. "this round of financing is undoubtedly a strong financial support to us, can speed up the pace of our products, but also help us to expand manpower, rapid layout of the market." Huang Xing said.
The third generation semiconductors represented by silicon carbide and gallium nitride are regarded as the next important industrial track. Compared with the first and second generation semiconductors, the third generation semiconductors have many advantages, such as wide band gap, high voltage resistance, low impedance and so on. it is especially suitable for high power and high frequency and high voltage scenarios, in which the design and manufacturing process of silicon carbide is relatively more mature. At present, it has been more and more widely used in new energy vehicles, charging piles, photovoltaic, wind power, industrial control and many other fields.
Chuangdong Investment, which has long focused on venture capital in the field of hard technology, is optimistic about the future development prospects of this field. Chuangdong said it expects the permeability of third-generation semiconductors to rise rapidly from the current about 1% to more than 5% by 2024. Pioneer Semiconductor is the front-runner with technology leadership, product landing, market breadth and growth certainty selected by the Oriental Investment team in the key track of the third generation semiconductor.
"the semiconductor industry is not afraid of a protracted war. In fact, there are not many teams with comprehensive capabilities ranging from technology to products to market integration advantages, while all kinds of resources, whether industrial capital and investment institutions, are abundant in the market. " Xie Yujuan, partner of Chuangfang Investment, pointed out that from the point of view of investors, more attention is paid to the selection of reliable teams and projects, and hopes to accompany the team to grow slowly.
The investment team believes that Painjie Semiconductor is the only supplier in China that has developed and widely promoted the silicon carbide SBD+MOS series product line to the market. The main silicon carbide MOS products are more than two generations ahead of their domestic counterparts on average (3-5 years), and the key performance parameters have reached the world's first-class level. At the same time, the company's sales team is high-level senior sales from Cree and Rohm, so that the company can reach customer needs more widely and accurately.
Huang Xing said that the application of the new energy vehicle market will be the main driver of silicon carbide growth in the future, and some car companies are already talking to them about cooperation, and the company will further focus on the development and mass production of car-grade silicon carbide products. From the perspective of industry and technology chain, the next two years are also expected to enter the transition period from IGBT to silicon carbide. "people gradually find that silicon carbide plays a great role in the efficiency of the whole car, even in terms of mute. For example, when using IGBT, the noise of its electrode is relatively obvious, while silicon carbide can hardly hear the noise. " Huang Xing explained that he expects that there will be a sample car of silicon carbide in China this year, and that there will be a process of gradually changing from IGBT to silicon carbide from next year.
According to public data, Pinejie Semiconductor was founded in September 2018, committed to silicon carbide and gallium nitride power device design and development and product sales, in order to achieve the replacement of state-owned brands. The founding core teams of the company come from well-known companies in the industry, with more than 10 years of R & D, production, management and sales experience in the semiconductor industry. It is worth mentioning that six months after the establishment of the company, the first compatible drive 650V gallium nitride HEMT product was completed; in the same year, the 1200V silicon carbide MOS product of Gen3 technology was released, and the HDFM technical index was in the lead in China; in 2020, the company launched low-VF and high-surge 650V silicon carbide SBD products to achieve another iteration of technology. At present, the company's products are silicon carbide SBD, silicon carbide MOS, gallium nitride HEMT and other three series, covering 650V-3300V voltage platform, more than 50 different models of silicon carbide and gallium nitride power devices, widely used in server and data center power supply, new energy vehicles, intelligent Electroweb, 5G Internet of things, industrial motors, inverters and other scenarios and fields.
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