Tsinghua Team Makes Breakthrough in Spintronics, Published in Nature

Published: Mar 3, 2026 14:11

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Tsinghua University announced that the team led by Song Cheng and Pan Feng from the School of Materials at Tsinghua has made significant progress in spintronics materials and devices, achieving efficient and complete electrical switching of chiral antiferromagnetic order. This research bridges a critical gap between fundamental studies of chiral antiferromagnets and their application in devices, laying the foundation for developing a new generation of magnetic storage with ultra-high density, ultra-fast read/write speeds, and low power consumption. The related findings were published in Nature on February 25.

In the experiment, Mn3Sn homojunctions were prepared using molecular beam epitaxy, and zero-field switching polarity reversal was achieved through pre-magnetization control. Tests showed that this switching method has superior resistance to magnetic field interference. According to the paper, the new configuration significantly optimizes three key metrics: critical current density, power consumption, and the ratio of anomalous Hall coercivity to current density, with the third metric showing a two-order-of-magnitude improvement over ferromagnetic materials.

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